| 摘要 |
A resistive random access memory (RRAM) unit includes at least one bit line extending along a first direction, at least one word line disposed on a substrate and extending along a second direction so as to intersect the bit line, a hard mask layer on the word line to isolate the word line from the bit line, a first memory cell on a sidewall of the word line, and a second memory cell on the other sidewall of the word line. |
