| 摘要 |
The present invention provides a method for in situ cleaning of an MOCVD reaction chamber. The method of the present invention includes introducing a first cleaning gas to a reaction chamber, changing the first cleaning gas into first plasma in a reaction chamber, removing the carbon organic material of the reaction chamber by maintaining the pressure of the chamber in a range of a predetermined first pressure for a first time period. The first cleaning gas includes a first oxygen-containing gas. A second cleaning gas is introduced to the chamber. The second cleaning gas is changed into second plasma in the reaction chamber. Thereby, a metal oxide in the reaction chamber is completely removed. The second cleaning gas includes a first halogen-containing gas. [Reference numerals] (S101) Introducing a first cleaning gas to a reaction chamber(10) and changing the first cleaning gas into first plasma in the reaction chamber(10); (S102) Maintaining the internal pressure of the reaction chamber(10) in a range of a predetermined pressure, maintaining the plasma in the reaction chamber(10) for a predetermined cycle, and completely removing deposited materials in the reaction chamber(10) |
