| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon nitride circuit board made of a silicon nitride based sintered compact having high strength and high thermal conductivity, a method for producing the same, and a silicon nitride circuit board and a semiconductor module using the same.SOLUTION: Provided is a silicon nitride based sintered compact in which grain boundary phases are made of amorphous phases and MgSiNcrystal phases, and in which the X-ray diffraction peak intensities of all the crystal faces of the crystal phases including rare earth elements (RE) are below 0.0005 times the sum of the diffraction ray peak intensities of (110), (200), (101), (210), (201), (310), (320) and (002) of the crystal grains of the &bgr; type silicon nitride, and the X-ray diffraction peak intensity of the (121) of the MgSiN2 crystal phases is 0.0005 to 0.0019 times the sum of the X-ray diffraction peak intensities of the (110), (200), (101), (210), (201), (310), (320) and (002) of the crystal grains of the &bgr; type silicon nitride. |
