| 摘要 |
PROBLEM TO BE SOLVED: To remove a gas generated by reaction from a chamber in a short time when etching a predetermined etching target film by a predetermined etching gas.SOLUTION: An etching apparatus 5 comprises: a chamber 40 for housing a processed substrate W having an etching target film; an exhaustion mechanism 44 for exhausting air inside the chamber 40; an etching gas introduction mechanism 43 for introducing an etching gas into the chamber; and gas cluster generating mechanisms 74, 56, 63 for generating a gas cluster inside the chamber 40 by injecting a cluster gas for generating the gas cluster inside the chamber 40. The etching apparatus 5 removes, from the chamber 40 by the gas cluster, a gas generated by reaction in etching of the etching target film by the etching gas. |
