SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device including a first source and a first drain of a P-channel-type MISFET formed on a Ge wafer, which are made of a compound having a Ge atom and a nickel atom, a compound having a Ge atom and a cobalt atom, or a compound having a Ge atom, a nickel atom, and a cobalt atom, and a second source and a second drain of an N-channel-type MISFET formed on the Group III-V compound semiconductor, which are made of a compound having a Group III atom, a Group V atom, and a nickel atom, a compound having a Group III atom, a Group V atom, and a cobalt atom, or a compound having a Group III atom, a Group V atom, a nickel atom, and a cobalt atom.