FIN STURCTURED FIELD EFFECT TRANSISTOR, MEMORY DEVICE INCLUDING THE SAME AND SEMICONDUCTOR DEVICE THEREOF

摘要

Provided are a field effect transistor, a memory device including the same, and a system on chip including the same. A field effect transistor according to one embodiment of the present invention includes a first silicide which is separated from a gate and located in the upper part of a source, a second silicide which is separated from the gate and located on the upper part of a drain, and one or more contacts which are located on the upper part of the first silicide and the second silicide, respectively. The capacitance of the first silicide and the second silicide with regard to the gate can be different from each other. According to the present invention, the total capacitance is reduced and the read stability and the write stability of the memory device can be improved.