发明名称 MAGNETORESISTIVE EFFECT ELEMENT
摘要 PROBLEM TO BE SOLVED: To achieve miniaturization of size by thinning a total film thickness.SOLUTION: A magnetoresistive effect element 30 includes a multilayer film in which a transition metal nitride film 11, an anti-ferromagnetic film 12, a first ferromagnetic film 13, an anti-parallel coupling film 16, a second ferromagnetic film 17, a nonmagnetic film 14, and a perpendicular magnetic anisotropic film 15 are laminated in this order. The first ferromagnetic film 13 has a negative perpendicular magnetic anisotropy constant. The first ferromagnetic film 13 is forcibly magnetized in a direction perpendicular to the film surface due to an exchange coupling magnetic field generated by the anti-ferromagnetic film 12. The first ferromagnetic film 13 and the second ferromagnetic film 17 are magnetized in respective directions anti-parallel with each other due to superexchange interaction induced by the anti-parallel coupling film 16.
申请公布号 JP2014060297(A) 申请公布日期 2014.04.03
申请号 JP20120205010 申请日期 2012.09.18
申请人 TOSHIBA CORP;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 NOMA KENJI;KUBOTA HITOSHI;YAKUSHIJI KEI
分类号 H01L43/10;H01L21/8246;H01L27/105;H01L29/82;H01L43/08 主分类号 H01L43/10
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