发明名称 LIGHT EMITTING DIODE
摘要 A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a second electrode. The second electrode includes a treated patterned carbon nanotube film. The treated patterned carbon nanotube film includes at least two carbon nanotube linear units spaced from each other; and carbon nanotube groups spaced from each other. The carbon nanotube groups are located between the at least two carbon nanotube linear units, and combined with the at least two carbon nanotube linear units.
申请公布号 US2014091352(A1) 申请公布日期 2014.04.03
申请号 US201313866408 申请日期 2013.04.19
申请人 CO., LTD. BEIJING FUNATE INNOVATION TECHNOLOGY;BEIJING FUNATE INNOVATION TECHNOLOGY CO., LTD. 发明人 FENG CHEN;QIAN LI;WANG YU-QUAN
分类号 H01L33/40 主分类号 H01L33/40
代理机构 代理人
主权项
地址