发明名称 |
POWER SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A power switching device includes a channel forming layer on a substrate which includes a 2-dimensional electron gas (2DEG), and a channel supply layer which corresponds to the 2DEG at the channel forming layer. A cathode is coupled to a first end of the channel supply layer and an anode is coupled to a second end of the channel supply layer. The channel forming layer further includes a plurality of depletion areas arranged in a pattern, and portions of the channel forming layer between the plurality of depletion areas are non-depletion areas. |
申请公布号 |
US2014091312(A1) |
申请公布日期 |
2014.04.03 |
申请号 |
US201313927230 |
申请日期 |
2013.06.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON WOO-CHUL;PARK YOUNG-HWAN;PARK KI-YEOL;SHIN JAI-KWANG;OH JAE-JOON |
分类号 |
H01L29/20;H01L29/66 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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