| 摘要 |
PROBLEM TO BE SOLVED: To provide a PZT film formation method which can enhance the piezoelectricity of PZT films, and a PZT film formation apparatus.SOLUTION: A PZT film formation method includes a first step of heating a stage 15 on which a substrate S is placed to a first temperature, and a second step of heating the stage 15 to a second temperature. The first temperature is higher than the second temperature. In the first step, at least lead evaporates from a PZT film FI for an initial layer which is preliminarily deposited on the surface of the stage 15. In the second step, a lead zirconate titanate target T is sputtered in mixed gas atmosphere including oxygen and argon, where the oxygen flow of the mixed gas is set to 1.3% or higher and 5.0% or less. |
