METHOD FOR PRODUCING SILICON SINGLE CRYSTAL FOR EVALUATION

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal by a Czochralski process (CZ process) that may grow a dislocation-free silicon single crystal for evaluation having no crystal defect, when growing the silicon single crystal for evaluating the quality of high-purity polycrystalline silicon used for a semiconductor and a solar cell.SOLUTION: A method for producing a silicon single crystal for evaluation by a CZ process comprises the steps for melting a polycrystalline silicon to be evaluated in a crucible, immersing a seed crystal consisting of a dislocation-free silicon single crystal in the silicon melt, and then pulling up the seed crystal without necking to grow a straight body of the dislocation-free silicon single crystal, in which a temperature profile of the silicon melt charged in the crucible for heating it in a direction along a liquid surface is a temperature that is constant in a region being the center of the crucible and being equivalent to a diameter for pulling up the silicon single crystal and increases from the center toward an outer edge of the crucible.