| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer for 2 wavelength semiconductor laser in which deviation of polarization angle from 0 degree can be suppressed, and to provide a manufacturing method therefor and a 2 wavelength semiconductor laser assembly.SOLUTION: First and second compound semiconductor layers 12a, 12b for semiconductor laser are provided alternately in the width direction of an epitaxial wafer 10 for 2 wavelength semiconductor laser. Indium composition of one of the first and second compound semiconductor layers 12a, 12b for semiconductor laser increases in the width direction from one end toward the other end, and indium composition of the other of the compound semiconductor layers decreases in the width direction from one end toward the other end. (The width direction is a direction perpendicular to the laser light oscillation direction of the first and second compound semiconductor layers for semiconductor laser, and the growth direction of the first and second compound semiconductor layers for semiconductor laser). |
