发明名称 |
STRAINED GATE-ALL-AROUND SEMICONDUCTOR DEVICES FORMED ON GLOBALLY OR LOCALLY ISOLATED SUBSTRATES |
摘要 |
Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional channel region is disposed above the insulating structure. Source and drain regions are disposed on either side of the three-dimensional channel region and on an epitaxial seed layer. The epitaxial seed layer is composed of a semiconductor material different from the three-dimensional channel region and disposed on the insulating structure. A gate electrode stack surrounds the three-dimensional channel region with a portion disposed on the insulating structure and laterally adjacent to the epitaxial seed layer. |
申请公布号 |
WO2014051728(A2) |
申请公布日期 |
2014.04.03 |
申请号 |
WO2013US45217 |
申请日期 |
2013.06.11 |
申请人 |
INTEL CORPORATION |
发明人 |
CAPPELLANI, ANNALISA;PETHE, ABHIJIT JAYANT;GHANI, TAHIR;GOMEZ, HARRY;KIM, SEIYON |
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