MEMORY DEVICES HAVING UNIT CELL AS SINGLE DEVICE AND METHODS OF MANUFACTURING THE SAME

摘要

In one embodiment, a memory device includes a first electrode layer on a substrate; a data storing layer on the first electrode layer; and a second electrode layer on the data storing layer. At least one of the first and second electrode layers may be formed of a material having a conduction band offset that varies with an applied voltage. One of the first and second electrode layers may be connected to a bit line and the other may be connected to a word line. The first electrode layer may include one of graphene and metastable oxide. The second electrode layer may include one of graphene and metastable oxide.