| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation device capable of improving uniformity of plasma density.SOLUTION: An ion implantation device comprises: a vacuum chamber 11; an electrode roll 13 around an outer periphery of which a film 3 is partially wound; voltage application means 23 for applying a voltage to the electrode roll; and a gas introduction part having a gas outlet for introducing ion-implantation gas in the vacuum chamber. The gas introduction part and an air exhaust port are opposed to each other to sandwich the electrode roll in an axial direction of the electrode roll. |
