| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device and a manufacturing method of the same, which can improve switching characteristics while inhibiting reduction in drain current.SOLUTION: A manufacturing method of a silicon carbide semiconductor device 1 comprises the following steps of: preparing a silicon carbide substrate 10 which includes a principal surface 10a and has a first conductivity type region 17, a pair of second conductivity type well regions 13 which sandwich the first conductivity type region 17, and an n-type region 3 which is arranged between the pair of well regions 13 and contacts the first conductivity type region 17; and oxidizing the principal surface 10a of the silicon carbide substrate 10 to form a gate insulation film 15 which contacts the well regions 13 and the first conductivity type region 17. When the first conductivity type is n-type, an impurity concentration of the n-type region 3 is higher than an impurity concentration of the first conductivity type region 17. When the first conductivity type is p-type, an impurity concentration of the n-type region 3 is higher than an impurity concentration of each well region 13. |
