VERTICALLY-INTEGRATED NONVOLATILE MEMORY DEVICES HAVING LATERALLY-INTEGRATED GROUND SELECT TRANSISTORS

摘要

Nonvolatile memory devices utilize vertically-stacked strings of nonvolatile memory cells (e.g., NAND-type strings) that can be selectively coupled to common source lines within a substrate. This selective coupling may be provided by lateral ground select transistors having different threshold voltages that account for different lateral spacings between the vertically-stacked strings of nonvolatile memory cells and the common source lines.