| 摘要 |
The invention is to provide a method for programming and reading a flash memory, storing the last programming page in a block while programming the flash memory, judging the programming times in the cell of the block by means of the last programming page and the order and distribution of the page in the predefined page distribution list of the block while reading the flash memory, and selecting the predefined voltage based on the judged programming times to implement the reading process for raising reading performance. |
