发明名称 |
COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
An AlGaN/GaN HEMT includes: a compound semiconductor layer; a source electrode and a drain electrode formed on an upper side of the compound semiconductor layer; and an Al—Si—N layer being a high-resistance layer disposed in a lower portion of at least one of the source electrode and the drain electrode and higher in an electric resistance value than the source electrode and the drain electrode. |
申请公布号 |
US2014092635(A1) |
申请公布日期 |
2014.04.03 |
申请号 |
US201313968828 |
申请日期 |
2013.08.16 |
申请人 |
FUJITSU LIMITED;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
KAMADA YOUICHI;KIUCHI KENJI |
分类号 |
H01L29/778;H01L29/66;H02M3/335 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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