STRUCTURE OF ELECTRODE OF SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING STRUCTURE OF ELECTRODE OF SEMICONDUCTOR ELEMENT

摘要

A p-side electrode (17) is formed to extend to a position at a height substantially equal to that of an n-side electrode (18), taking into account that a p-type semiconductor layer (15) of an LED element (11) is higher than an n-type semiconductor layer (13) (n-side electrode (18)). Consequently, the p-side electrode (17) and the n-side electrode (18) are formed at the substantially same height, and the p-side electrode (17) is formed at a position lower than the p-type semiconductor layer (15). If the p-side electrode (17) and the n-side electrode (18) are at the substantially same height in such a manner, since a resin slope (22), i.e., a base for wiring (23, 24), has a symmetric shape, process of forming the resin slope (22) is facilitated, and a step in the base for the wiring (23, 24) becomes susceptible to be reduced. Consequently, the wiring (23, 24) having high connection reliability can be formed by means of a film-forming method.