发明名称 |
BLACK ALUMINUM NITRIDE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a black aluminum nitride (AlN) substrate by nitriding an entire surface of a metallic aluminum sheet, the AIN substrate being capable of efficiently absorbing solar beams of all wavelength regions and converting the same into heat, and of transporting the resulting heat to a thermoelectric device at a high speed.SOLUTION: The black aluminum nitride comprises nano-sized cubic crystals or nano-sized whiskers (fibrous crystals), which are formed on a metallic aluminum sheet surface by heating a metallic aluminum sheet (hereafter referred to also as an "Al sheet") in a nitrogen atmosphere for a specified period of time at a temperature equal to or higher than the melting point of the metallic aluminum sheet (660.2°C). |
申请公布号 |
JP2014058419(A) |
申请公布日期 |
2014.04.03 |
申请号 |
JP20120203729 |
申请日期 |
2012.09.15 |
申请人 |
INSTITUTE OF NATIONAL COLLEGES OF TECHNOLOGY JAPAN |
发明人 |
KAWAMOTO TAKASHI;ASANO JUN |
分类号 |
C01B21/072;B82Y30/00;B82Y40/00;C23C8/24;H01L35/30 |
主分类号 |
C01B21/072 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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