发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND PROGRAM |
摘要 |
PROBLEM TO BE SOLVED: To form a thin film, such as a silicon film, containing a predetermined element in a low temperature region.SOLUTION: A thin film formed with a predetermined element, is formed on a substrate by performing a cycle of steps a predetermined number of times, the cycle including: a step of supplying a first raw material including predetermined elements and halogen group to a substrate; and a step of supplying a second raw material including predetermined element and amino group, having two or less ligands which includes amino group in its composition formula and in which its number of is less than that of ligand including halogen group in a composition formula of the first raw material. |
申请公布号 |
JP2014060228(A) |
申请公布日期 |
2014.04.03 |
申请号 |
JP20120203679 |
申请日期 |
2012.09.14 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC;L'AIR LIQUIDE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE |
发明人 |
HIROSE YOSHIRO;MIZUNO KANEKAZU;YANAGIDA KAZUTAKA;HIGASHINO KEIKO |
分类号 |
H01L21/205;C23C16/455 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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