| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS type solid-state imaging device capable of increasing the sensitivity even when pixels are miniaturized.SOLUTION: The MOS type solid-state imaging device has a photodiode layout in which lateral 2 pixels, vertical 4×n pixels (n is a positive integer) of pixel transistors commonly including at least a reset transistor and an amplification transistor. Read-out wirings is constituted of plural wirings on plural layers so that only a single wiring exists between the photodiodes neighboring in a vertical direction of the pixels as viewed from the upper face. |
