| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image sensor capable of generating images suitable to the purpose.SOLUTION: A CMOS image sensor includes: a photodiode; a memory part; a floating diffusion region; a first transfer gate that transfers the charge from the photodiode to the memory part; a second transfer gate that transfers the charge from the memory part to the floating diffusion region; and a charge discharge gate that discharges the charge from the photodiode. Between the photodiode and the memory part, an overflow path is formed. As the channel potential of the charge discharge gate, a potential which is lower than the potential on the overflow path is set, or a potential which is higher than the potential on the overflow path and is lower than the complete depletion potential of the photodiode is set. The solid-state image sensor is applicable to, for example, a CMOS image sensor having a global shutter. |
