| 摘要 |
PROBLEM TO BE SOLVED: To provide a fluid chip to be re-loaded into a crucible in e.g. a Czochralski process and a method of producing crystalline silicon.SOLUTION: The fluid chip is produced by a chemical vapor growth method and composed of a group of polycrystalline silicon pieces which contain 0.03 ppma or less bulk impurities and 15 ppba or less surface impurities and have a controlled particle size distribution and roughly nonspherical morphology. The bulk impurities comprise 0.06 ppba or less B, 0.30 ppba or less donor, 0.02 ppba or less P and 0.24 ppma or less C with a total content of bulk metal impurities of 4.5 ppba or less and contents of Cr, Cu, Fe and Ni of 0.01 ppba or less. The surface impurities comprise 0.06 ppba or less Cr, 0.15 ppba or less Cu, 10 ppba or less Fe, 0.9 ppba or less Na, 0.6 ppba or less Ni and 0.6 ppba or less Zn. |
