发明名称 SEMICONDUCTOR DEVICE COMPRISING A CRACK STOP STRUCTURE
摘要 A semiconductor device may include at least one pad adjacent a top surface of the device, and a metal crack stop structure below the at least one pad. The metal crack structure may have an inner envelope and an outer envelope, and may be configured to be vertically aligned with the at least one pad so that an edge of the at least one pad is between the inner and outer envelopes.
申请公布号 US2014091451(A1) 申请公布日期 2014.04.03
申请号 US201314032618 申请日期 2013.09.20
申请人 STMICROELECTRONICS (CROLLES 2) SAS 发明人 DELPECH PHILIPPE;SABOURET ERIC;GALLOIS-GARREIGNOT SEBASTIEN
分类号 H01L23/00;H01L21/50 主分类号 H01L23/00
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