发明名称 |
SEMICONDUCTOR DEVICE COMPRISING A CRACK STOP STRUCTURE |
摘要 |
A semiconductor device may include at least one pad adjacent a top surface of the device, and a metal crack stop structure below the at least one pad. The metal crack structure may have an inner envelope and an outer envelope, and may be configured to be vertically aligned with the at least one pad so that an edge of the at least one pad is between the inner and outer envelopes. |
申请公布号 |
US2014091451(A1) |
申请公布日期 |
2014.04.03 |
申请号 |
US201314032618 |
申请日期 |
2013.09.20 |
申请人 |
STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
DELPECH PHILIPPE;SABOURET ERIC;GALLOIS-GARREIGNOT SEBASTIEN |
分类号 |
H01L23/00;H01L21/50 |
主分类号 |
H01L23/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|