MIRROR ARRANGEMENT FOR AN EUV PROJECTION EXPOSURE APPARATUS, METHOD FOR OPERATING THE SAME, AND EUV PROJECTION EXPOSURE APPARATUS

摘要

A mirror arrangement for an EUV projection exposure apparatus for microlithography comprises a plurality of mirrors each having a layer (32) which is reflective in the EUV spectral range and to which EUV radiation can be applied, and having a main body (34). In this case, at least one mirror (32) of the plurality of mirrors has at least one layer (36) comprising a material having a negative coefficient of thermal expansion. Moreover, a method for operating the mirror arrangement and a projection exposure apparatus are described. At least one heat source is arranged, in order to locally apply heat in a targeted manner to the at least one layer having a negative coefficient of thermal expansion of the at least one mirror.