THE MANUFACTURING METHOD OF SILICON OXIDE FOR GATE DIELECTRICS USING A LOW TEMPERATURE PROCESS

摘要

The present invention relates to a method for manufacturing a silicon oxide gate insulating film in a low temperature process comprising a first step for forming silica solution by distributing a silica particle to water and reforming the surface of the silica particle by using organosilane; a second step for replacing the water of the first step with an organic solvent; a third step for forming mixed solution by mixing solution that epoxy resin is dissolved and the silica solution; a fourth step for coating the mixed solution on a substrate; and a fifth step for performing heat processing in a 120-300 temperature. The present invention is provided to manufacture silicon oxide for a gate insulating film by forming the silicon oxide and performing the heat processing below a 300 temperature, thereby applying the silicon oxide to a polymer material substrate. [Reference numerals] (AA) Manufacture a silicon oxide gate insulating film in a low temperature process; (BB) Reform silica surface; (CC,DD) Reform the silica surface with organosilane; (EE) Replace a solvent with an organic solvent; (FF) Dissolve epoxy resin; (GG) Mix and respond the reformed silica and epoxy solution; (HH) Form a coating film and perform heat processing