| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for preparing mask data capable, while executing a pattern correction taking into account effects of development and later processes, of abbreviating the calculation time.SOLUTION: The provided method for preparing mask data has the following characteristics: data on a first correction pattern of a singular cell corrected so as to induce the approach, toward a goal value, of an evaluation value of a pattern formed atop a substrate by projecting, onto a resist atop the substrate, an image of the pattern of the singular cell and by then developing the resist are acquired for each of multiple cells; a first evaluation value obtained by evaluating the projection image of the first correction pattern of the singular cell provided by a projection optical system is acquired for each of the multiple cells; a second evaluation value obtained by evaluating the projection image of the respective first correction patterns of multiple cells in a case where the multiple cells are adjacently aligned is calculated; and a second correction pattern is prepared by correcting the respective first correction patterns of the multiple adjacent cells so as to induce the approach of the second evaluation value toward the first evaluation value. |
