THREE-DIMENSIONALLY STRUCTURED SEMICONDUCTOR SUBSTRATE FOR A FIELD EMISSION CATHODE, METHOD FOR PRODUCING SAME, AND FIELD EMISSION CATHODE

摘要

The invention relates to the art of electrical engineering. The method for producing a three-dimensionally structured substrate for a field emission cathode is characterized in that the surface is prepared by prewashing the substrate to remove impurities, and the portion of the surface that is not subject to etching is chemically and mechanically protected while the portion which is to be etched is left open. The substrate is placed in a tray with an etching electrolyte, and photoelectrochemical etching is carried out within the boundaries of that portion of the surface identified for the subsequent deposition of a field emission carbon film. Furthermore, the photochemical etching is carried out under conditions which enable the formation, on the surface of the substrate, of micropoints or a quasi-regular cell cluster structure formed as an accumulation of cone-shaped channels with a minimum aspect ratio of 2. The three-dimensionally structured field emission cathode substrate is made from p-type crystalline silicon having a conductivity of 1 to 8 &OHgr;•cm. The field emission cathode comprises a substrate with a nanostructured carbon film deposited thereon.