| 摘要 |
The disclosed technology relates to a non-volatile resistive memory device and a method of using the same. In one aspect, the memory device comprises a plurality of memory cells interconnected by a plurality of bit lines, a plurality of word lines, a plurality of source lines and a plurality of form lines. The memory device further comprises a memory controller connected to and configured to apply voltages to the bit lines, the word lines, the source lines and the form lines. In addition, each of the memory cells comprises a cell selecting transistor and a resistive memory element serially connected to a drain-source path of the cell selecting transistor. Furthermore, each of the memory cells comprises a boosting capacitor configured to provide a boosting a voltage to an internal node formed at a connection point between the resistive memory element and the cell selecting transistor. |
