| 摘要 |
<p>The present invention suppresses a reverse direction leak current generated due to an interface trap between n-type GaN and a p-type oxide semiconductor in the cases where the p-type oxide semiconductor is used for a guard ring for an n-type GaN Schottky barrier diode. The guard ring is formed of p-type nickel oxide, gallium oxide is provided between the p-type nickel oxide and the surface of an n-type GaN layer, generation of a trap at the interface between the p-type nickel oxide and the n-type GaN is suppressed, and a reverse direction leak current is prevented from being increased.</p> |
