发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a display device which operates stably by using a transistor having stable electrical characteristics.SOLUTION: In manufacturing a display device by applying a transistor with an oxide semiconductor layer as a channel formation region, an additional gate electrode is disposed on at least a transistor applied to a drive circuit. In manufacturing a transistor with an oxide semiconductor layer as a channel formation region, heat treatment for dehydration or dehydrogenation is performed to the oxide semiconductor layer to reduce an impurity such as moisture and the like existing in the interfaces of the oxide semiconductor layer with a gate insulating layer and a protective insulation layer which are disposed above and below in contact therewith.
申请公布号 JP2014060411(A) 申请公布日期 2014.04.03
申请号 JP20130219804 申请日期 2013.10.23
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SAKATA JUNICHIRO;SASAKI TOSHINARI;HOSOHANE MIYUKI
分类号 H01L21/336;G02F1/1368;H01L21/28;H01L29/786;H01L51/50;H05B33/14 主分类号 H01L21/336
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