| 摘要 |
In order to reduce current collapse, and increase gain due to a reduction in a gate-drain capacitance (Cgd) and a gate resistance (Rg), this semiconductor device is provided with: a substrate; a first semiconductor layer that is positioned on the substrate, and is composed of a group III nitride semiconductor; a second semiconductor layer that is positioned on the first semiconductor layer, and is composed of a group III nitride semiconductor; a gate electrode, a source electrode and a drain electrode that are positioned on the second semiconductor layer; a first field plate electrode that is positioned on the second semiconductor layer; and a second field plate electrode that is positioned on the first field plate electrode. Furthermore, the first field plate electrode and the second field plate electrode are positioned between the gate electrode and the drain electrode. |
