发明名称 |
COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A compound semiconductor device includes: a compound semiconductor layered structure; a gate electrode formed above the compound semiconductor layered structure; a first protective insulating film that covers a surface of the compound semiconductor layered structure and is made of silicon nitride as a material; a second protective insulating film that covers the gate electrode on the first protective insulating film and is made of silicon oxide as a material; and a third protective insulating film that contains silicon oxynitride and is formed between the first protective insulating film and the second protective insulating film. |
申请公布号 |
US2014092637(A1) |
申请公布日期 |
2014.04.03 |
申请号 |
US201314010824 |
申请日期 |
2013.08.27 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED;FUJITSU LIMITED |
发明人 |
MINOURA YUICHI;WATANABE YOSHITAKA |
分类号 |
H01L29/40;H02M3/28 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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