发明名称 |
Semiconductor Device and Method of Forming Supporting Layer Over Semiconductor Die in Thin Fan-Out Wafer Level Chip Scale Package |
摘要 |
A semiconductor device includes a semiconductor die. An encapsulant is formed around the semiconductor die. A build-up interconnect structure is formed over a first surface of the semiconductor die and encapsulant. A first supporting layer is formed over a second surface of the semiconductor die as a supporting substrate or silicon wafer disposed opposite the build-up interconnect structure. A second supporting layer is formed over the first supporting layer an includes a fiber enhanced polymer composite material comprising a footprint including an area greater than or equal to an area of a footprint of the semiconductor die. The semiconductor die comprises a thickness less than 450 micrometers (μm). The thickness of the semiconductor die is at least 1μm less than a difference between a total thickness of the semiconductor device and a thickness of the build-up interconnect structure and the second supporting layer. |
申请公布号 |
US2014091454(A1) |
申请公布日期 |
2014.04.03 |
申请号 |
US201213630912 |
申请日期 |
2012.09.28 |
申请人 |
STATS CHIPPAC, LTD. |
发明人 |
LIN YAOJIAN;CHEN KANG;GU YU |
分类号 |
H01L23/28;H01L21/56 |
主分类号 |
H01L23/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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