发明名称 Reverse Polarity Protection for n-Substrate High-Side Switches
摘要 A semiconductor device is disclosed. In accordance with a first aspect of the present invention the device includes a semiconductor chip having a substrate, a first supply terminal electrically coupled to the substrate to provide a first supply potential (VS) and a load current to the substrate, and a second supply terminal operably provided with a second supply potential. A first vertical transistor is integrated in the semiconductor chip and electrically coupled between the supply terminal and an output terminal. The first vertical transistor is configured to provide a current path for the load current to the output terminal in accordance with a control signal, which is provided to a gate electrode of the first vertical transistor.
申请公布号 US2014091384(A1) 申请公布日期 2014.04.03
申请号 US201213631924 申请日期 2012.09.29
申请人 INFINEON TECHNOLOGIES AG 发明人 PETRUZZI LUCA;AUER BERNHARD;DEL CROCE PAOLO;LADURNER MARKUS
分类号 H01L29/78 主分类号 H01L29/78
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