SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH TOPOGRAPHICALLY SMOOTH ELECTRODE AND METHOD TO FORM SAME

摘要

Spin transfer torque memory (STTM) devices with topographically smooth electrodes and methods of fabricating STTM devices with topographically smooth electrodes are described. For example, a material layer stack for a magnetic tunneling junction includes a topographically smooth bottom electrode, a topographically smooth dielectric layer disposed above the bottom electrode, and a free magnetic layer disposed above the topographically smooth dielectric layer.