| 摘要 |
<p>One embodiment of the present invention relates to a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device, according to the one embodiment, comprises: a first conductive type semiconductor layer (112); a gallium nitride-based superlattice layer (124) on the first conductive type semiconductor layer (112); an active layer (114) on the gallium nitride-based superlattice layer (124); and a second conductive type semiconductor layer (116) on the active layer (114), wherein the gallium nitride-based superlattice layer (124) in the first conductive type semiconductor layer (112) can change a band gap energy level in the direction of the active layer (114).</p> |
