| 摘要 |
A radiation hardened inverter (320) includes first and second electrical paths (311,312) between an input terminal and an output terminal (302,306). A first PFET (304) is disposed in the first electrical path, and a bipolar junction transistor (BJT) (308) is disposed in the second electrical path. The first PFET (304) is configured to convert a low level signal at the input terminal to a high level signal at the output terminal, and the BJT (308) is configured to convert a high level signal at the input terminal to a low level signal at the output terminal. |
