| 摘要 |
A capacitor and a method of forming a capacitor including forming a first conductive layer, a dielectric film, a second conductive layer, and a hard mask on and/or over a substrate, forming a hard mask pattern and an upper electrode each having a sloped sidewall by etching the hard mask and the first conductive layer, forming a spacer on and/or over the sidewall of each of the hard mask pattern and the upper electrode, and forming a lower electrode by etching the dielectric film and the second conductive layer. |
