发明名称 MOSFET WITH GATE PULL-DOWN
摘要 A MOSFET main switch transistor has a pull-down FET coupled between a drain thereof and the gate of the main switch transistor. A gate of the pull-down FET is coupled to the drain of the main switch transistor by a capacitor and is connected to a source thereof by a resistor. The pull-down FET is operated by capacitive coupling to the voltage drop across the main switch and can be used to hold the gate of the main switch transistor at or near its source potential to avoid or reduce unintentional turn-on of the main switch transistor by the Miller effect.
申请公布号 EP2517356(A4) 申请公布日期 2014.04.02
申请号 EP20100840116 申请日期 2010.12.22
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 XU, SHUMING;KOREC, JACEK;LOPEZ, OSVALDO, J.
分类号 H03K17/687;H03K17/16 主分类号 H03K17/687
代理机构 代理人
主权项
地址