| 摘要 |
A semiconductor process by which a semiconductor device is formed is characterised by comparing the voltage across a sensing resistor 304, which has a resistance dependent on the semiconductor process by which it was formed, with a plurality of reference voltages. A constant reference voltage from a reference voltage source 202 is provided to a voltage divider 311 which generates a plurality of reference voltages therefrom. The voltage across the process sensing resistor 304 is determined and compared to the reference voltages. Based on the result of the comparison, the semiconductor process can be characterized as nominal, fast or slow. The variation in the semiconductor process may be e.g. transistor feature size which affects the speed of the device. The sensing resistor may be formed on the same substrate as the device. The invention may be provided as part of a process, voltage and temperature (PVT) sensor. |
