| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor device having high breakdown voltage without causing dead time even immediately after turning off of high reference potential changing in a pulse-like manner. SOLUTION: In this semiconductor device 22, (n) MOS transistor elements Tr<SB>1</SB>-Tr<SB>12</SB>(n≥2) are sequentially serially connected to one another by using a GND side and a power side as a first stage and an n-th stage, respectively; gate terminals of the MOS transistors Tr<SB>2</SB>-Tr<SB>12</SB>of the respective stages excluding the first stage are respectively sequentially connected between serially-connected resistive elements R<SB>1</SB>-R<SB>12</SB>of the respective stages; and gate terminals of at least the MOS transistors Tr<SB>2</SB>-Tr<SB>6</SB>of the lower stages, excluding the first stage, relative to the center are sequentially connected between serially-connected capacitive elements C<SB>1</SB>-C<SB>12</SB>of the respective stages through diode elements A<SB>2</SB>-A<SB>6</SB>each using a capacitive element side and a gate terminal side as an anode and a cathode, respectively. COPYRIGHT: (C)2011,JPO&INPIT |
