| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for evaluating impurities of a silicon single crystal in which a silicon sample can be dissolved in a solvent while preventing contamination of impurities so as to lower a minimum limit of impurity detection in the silicon single crystal. SOLUTION: In the method for evaluating impurities of a silicon single crystal, the silicon sample in a sample cup is completely dissolved in a gas phase to evaporate, and the residual in the sample cup is collected to evaluate the impurities in the silicon sample from the collected residual. The silicon sample is completely dissolved in the gas phase of heated vapors of hydrofluoric acid and fuming nitric acid each of which is heated in a different container up to a temperature lower than its boiling point. COPYRIGHT: (C)2012,JPO&INPIT |
