发明名称 Improvements in or relating to methods of electro-deposition on p-type germanium
摘要 P-type germanium which may be doped with indium, is plated with lead, antimony or an alloy thereof by first giving a flash coat of black porous antimony using a potential below that at which gas is generated but above the saturation potential of antimony, and then plating grey antimony and/or lead at normal potentials. The electrolyte for the flash coat contains 15-19 g per litre of KSb tartrate, 15 to 52 g citric acid and 37 to 195 g sodium citrate, adjusted to a pH above 6, and under these conditions black antimony is deposited at -850 to-950 MV, and a current density of .28 A/S.Dm. A graph is given. If a potentiostatic device is used to control deposition of black antimony, the conductor lead to germanium should be of low resistance e.g. secured by indium and copper deposited on the germanium. The second plating may be partly Sb, partly Pb-Sb alloy.
申请公布号 GB1064274(A) 申请公布日期 1967.04.05
申请号 GB19640008706 申请日期 1964.03.02
申请人 PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED 发明人
分类号 C25D3/34;C25D3/54;C25D3/56;C25D7/12;H01L21/288 主分类号 C25D3/34
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