DOPING METHOD FOR SEMICONDUCTOR NANOSTRUCTURE

摘要

The purpose of the present invention is to provide a doping method for easily performing a doping process in a semiconductor nanostructure. According to one aspect of the present invention, provided is a doping method of a semiconductor nanostructure which includes a step of preparing a substrate where a semiconductor nanostructure is formed on at one surface; a step of arranging a doping member where a coating layer which is separated from the substrate and includes dopants which is formed in the upper part of the semiconductor nanostructure is formed; a step of supplying the dopants included in the coating layer to the semiconductor nanostructure by a thermal process.