| 摘要 |
The present invention relates to a tunnel field-effect transistor (1) comprising: at least a source region (2) comprising a corresponding source semiconductor material; at least a drain region (3) comprising a corresponding drain semiconductor material, and at least a channel region (4) comprising a corresponding channel semiconductor material, which is arranged between the source region (2) and the drain region(3), the tunnel field-effect transistor (1)further comprising: at least a source-channel gate electrode (5) provided on at least an interface (5') between the source region (2) and the channel region (4); at least an insulator (5") corresponding to the source-channel gate electrode (5) that is provided between the source-channel gate electrode (5) and at least the interface (5') between the source region (2) and the channel region (4), at least a drain-channel gate electrode (6) provided on at least an interface(6') between the drain region (3) and the channel region(4), and at least an insulator(6") corresponding to the drain-channel gate electrode (6) that is provided between the drain-channel gate electrode (6) and at least the interface (6) between the drain region (3) and the channel region(4). |
