发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE |
摘要 |
<p>Disclosed is a method for cleaning a semiconductor substrate that can solve a problem of a conventional cleaning method which should include at least five steps for cleaning a substrate such as a semiconductor substrate. The method for cleaning a semiconductor substrate comprises a first step of cleaning a substrate with ultrapure water containing ozone, a second step of cleaning the substrate with ultrapure water containing a surfactant, and a third step of removing an organic compound derived from the surfactant, with a cleaning liquid containing ultrapure water and 2-propanol. After the third step, plasma of noble gas such as krypton is applied to the substrate to further remove the organic compound derived from the surfactant.</p> |
申请公布号 |
EP2284873(A4) |
申请公布日期 |
2014.04.02 |
申请号 |
EP20090733087 |
申请日期 |
2009.04.10 |
申请人 |
NATIONAL UNIVERSITY CORPORATION TOHOKU UNVERSITY;STELLA CHEMIFA CORPORATION |
发明人 |
OHMI, TADAHIRO;TERAMOTO, AKINOBU;HASEBE, RUI;MIYASHITA, MASAYUKI |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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