发明名称 |
Normally-off high electron mobility transistor |
摘要 |
A normally-off high electron mobility transistor (HEMT) includes: a channel layer (120) having a first nitride semiconductor, a channel supply layer (130) on the channel layer, a source electrode (161) and a drain electrode (162) at sides of the channel supply layer, a depletion-forming layer (140) on the channel supply layer, a gate insulating layer (150) on the depletion-forming layer, and a gate electrode (170) on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer. |
申请公布号 |
EP2713402(A2) |
申请公布日期 |
2014.04.02 |
申请号 |
EP20130173455 |
申请日期 |
2013.06.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
JEON, WOO-CHUL;PARK, YOUNG-HWAN;OH, JAE-JOON;KIM, KYOUNG-YEON;KIM, JOON-YONG;PARK, KI-YEOL;SHIN, JAI-KWANG;HWANG, SUN-KYU |
分类号 |
H01L29/778;H01L29/10;H01L29/20;H01L29/40;H01L29/423 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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